{"id":7761,"date":"2024-04-19T16:49:46","date_gmt":"2024-04-19T08:49:46","guid":{"rendered":"https:\/\/www.nanofab.com.cn\/?p=7761"},"modified":"2024-05-13T10:16:53","modified_gmt":"2024-05-13T02:16:53","slug":"the-reason-of-influencing-the-warping-degree-of-silicon-wafer","status":"publish","type":"post","link":"https:\/\/www.nanofab.com.cn\/fr\/perspicacite-2\/application\/la-raison-de-linfluence-sur-le-degre-de-deformation-dune-plaquette-de-silicium-2\/","title":{"rendered":"Film mince de polysilicium\u4e28Plusieurs raisons affectant le gauchissement des plaquettes de silicium"},"content":{"rendered":"<div data-elementor-type=\"wp-post\" data-elementor-id=\"7761\" class=\"elementor elementor-7761\" data-elementor-post-type=\"post\">\n\t\t\t\t\t\t<section class=\"elementor-section elementor-top-section elementor-element elementor-element-a8a5b91 elementor-section-boxed elementor-section-height-default elementor-section-height-default\" data-id=\"a8a5b91\" data-element_type=\"section\" data-settings=\"{&quot;jet_parallax_layout_list&quot;:[]}\">\n\t\t\t\t\t\t<div class=\"elementor-container elementor-column-gap-default\">\n\t\t\t\t\t<div class=\"elementor-column elementor-col-100 elementor-top-column elementor-element elementor-element-3a4b8ae\" data-id=\"3a4b8ae\" data-element_type=\"column\">\n\t\t\t<div class=\"elementor-widget-wrap elementor-element-populated\">\n\t\t\t\t\t\t<section class=\"elementor-section elementor-inner-section elementor-element elementor-element-b539f84 elementor-section-boxed elementor-section-height-default elementor-section-height-default\" data-id=\"b539f84\" data-element_type=\"section\" data-settings=\"{&quot;jet_parallax_layout_list&quot;:[]}\">\n\t\t\t\t\t\t<div class=\"elementor-container elementor-column-gap-no\">\n\t\t\t\t\t<div class=\"elementor-column elementor-col-50 elementor-inner-column elementor-element elementor-element-62a8e5d\" data-id=\"62a8e5d\" data-element_type=\"column\">\n\t\t\t<div class=\"elementor-widget-wrap elementor-element-populated\">\n\t\t\t\t\t\t<div class=\"elementor-element elementor-element-3b2329d elementor-widget elementor-widget-heading\" data-id=\"3b2329d\" data-element_type=\"widget\" data-widget_type=\"heading.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t<style>\/*! elementor - v3.20.0 - 20-03-2024 *\/\n.elementor-heading-title{padding:0;margin:0;line-height:1}.elementor-widget-heading .elementor-heading-title[class*=elementor-size-]>a{color:inherit;font-size:inherit;line-height:inherit}.elementor-widget-heading .elementor-heading-title.elementor-size-small{font-size:15px}.elementor-widget-heading .elementor-heading-title.elementor-size-medium{font-size:19px}.elementor-widget-heading .elementor-heading-title.elementor-size-large{font-size:29px}.elementor-widget-heading .elementor-heading-title.elementor-size-xl{font-size:39px}.elementor-widget-heading .elementor-heading-title.elementor-size-xxl{font-size:59px}<\/style><h1 class=\"elementor-heading-title elementor-size-default\">Film mince de silicium polycristallin\u4e28influence sur les causes du gauchissement des plaquettes de silicium<\/h1>\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-22b678f elementor-widget elementor-widget-post-info\" data-id=\"22b678f\" data-element_type=\"widget\" data-widget_type=\"post-info.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t<link rel=\"stylesheet\" href=\"https:\/\/www.nanofab.com.cn\/wp-content\/plugins\/elementor\/assets\/css\/widget-icon-list.min.css\"><link rel=\"stylesheet\" href=\"https:\/\/www.nanofab.com.cn\/wp-content\/plugins\/elementor-pro\/assets\/css\/widget-theme-elements.min.css\">\t\t<ul class=\"elementor-icon-list-items elementor-post-info\">\n\t\t\t\t\t\t\t\t<li class=\"elementor-icon-list-item elementor-repeater-item-577f4c4\" itemprop=\"datePublished\">\n\t\t\t\t\t\t<a href=\"https:\/\/www.nanofab.com.cn\/fr\/2024\/04\/19\/\">\n\t\t\t\t\t\t\t\t\t\t\t\t\t\t<span class=\"elementor-icon-list-text elementor-post-info__item elementor-post-info__item--type-date\">\n\t\t\t\t\t\t\t\t\t\t<time>2024-04-19<\/time>\t\t\t\t\t<\/span>\n\t\t\t\t\t\t\t\t\t<\/a>\n\t\t\t\t<\/li>\n\t\t\t\t<\/ul>\n\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-129eae1 elementor-widget elementor-widget-image\" data-id=\"129eae1\" data-element_type=\"widget\" data-widget_type=\"image.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t<style>\/*! elementor - v3.20.0 - 20-03-2024 *\/\n.elementor-widget-image{text-align:center}.elementor-widget-image a{display:inline-block}.elementor-widget-image a img[src$=\".svg\"]{width:48px}.elementor-widget-image img{vertical-align:middle;display:inline-block}<\/style>\t\t\t\t\t\t\t\t\t\t<img fetchpriority=\"high\" decoding=\"async\" width=\"780\" height=\"490\" src=\"https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/04\/39eab4126e833fe2e5a396e60db9ef0.png\" class=\"attachment-large size-large wp-image-7762\" alt=\"\" srcset=\"https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/04\/39eab4126e833fe2e5a396e60db9ef0.png 780w, https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/04\/39eab4126e833fe2e5a396e60db9ef0-300x188.png 300w, https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/04\/39eab4126e833fe2e5a396e60db9ef0-768x482.png 768w, https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/04\/39eab4126e833fe2e5a396e60db9ef0-18x12.png 18w\" sizes=\"(max-width: 780px) 100vw, 780px\" \/>\t\t\t\t\t\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-5ed3ccd elementor-widget elementor-widget-text-editor\" data-id=\"5ed3ccd\" data-element_type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t<style>\/*! elementor - v3.20.0 - 20-03-2024 *\/\n.elementor-widget-text-editor.elementor-drop-cap-view-stacked .elementor-drop-cap{background-color:#69727d;color:#fff}.elementor-widget-text-editor.elementor-drop-cap-view-framed .elementor-drop-cap{color:#69727d;border:3px solid;background-color:transparent}.elementor-widget-text-editor:not(.elementor-drop-cap-view-default) .elementor-drop-cap{margin-top:8px}.elementor-widget-text-editor:not(.elementor-drop-cap-view-default) .elementor-drop-cap-letter{width:1em;height:1em}.elementor-widget-text-editor .elementor-drop-cap{float:left;text-align:center;line-height:1;font-size:50px}.elementor-widget-text-editor .elementor-drop-cap-letter{display:inline-block}<\/style>\t\t\t\t<p>Dans de nombreux cas, les contraintes peuvent entra\u00eener des r\u00e9sultats ind\u00e9sirables. Le probl\u00e8me majeur de l'utilisation de la LPCVD pour d\u00e9poser des films de silicium polycristallin destin\u00e9s \u00e0 l'absorption des d\u00e9bris est que les contraintes \u00e0 l'int\u00e9rieur du film peuvent provoquer un gauchissement important de la plaquette de silicium.<\/p>\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-b448466 elementor-widget elementor-widget-heading\" data-id=\"b448466\" data-element_type=\"widget\" data-widget_type=\"heading.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t<h2 class=\"elementor-heading-title elementor-size-default\">Raisons du gauchissement des plaquettes<\/h2>\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-83b3402 elementor-widget elementor-widget-text-editor\" data-id=\"83b3402\" data-element_type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t<h2>Effet de la temp\u00e9rature de d\u00e9p\u00f4t sur le gauchissement de la plaquette<\/h2>\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-dc8b0bd elementor-widget elementor-widget-text-editor\" data-id=\"dc8b0bd\" data-element_type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t<p>Le gauchissement des plaquettes avec d\u00e9p\u00f4t de film mince est beaucoup plus important que celui des plaquettes sans d\u00e9p\u00f4t de film mince apr\u00e8s polissage, et le gauchissement des plaquettes diminue \u00e0 mesure que la temp\u00e9rature du d\u00e9p\u00f4t de film mince augmente.<\/p><p>Tout d'abord, comme le film de polysilicium est d\u00e9pos\u00e9 sur deux faces, apr\u00e8s le polissage, le film \u00e0 une seule face est enlev\u00e9, en raison du r\u00f4le de la contrainte interne du film, le degr\u00e9 de sa courbure en fl\u00e8che ne peut qu'augmenter.<\/p><p>Deuxi\u00e8mement, selon l'analyse de la th\u00e9orie des contraintes, la contrainte r\u00e9siduelle d'un film de polysilicium est \u00e9troitement li\u00e9e \u00e0 sa microstructure, qui d\u00e9pend fortement des conditions de d\u00e9p\u00f4t. \u00c0 basse temp\u00e9rature, la vitesse de d\u00e9p\u00f4t est lente, sous l'action de la tr\u00e8s faible \u00e9nergie cin\u00e9tique des atomes de silicium, qui les am\u00e8ne \u00e0 nucl\u00e9er \u00e0 la limite des grains fins plus petits, la faible liaison entre le film et le substrat produit de petites contraintes de traction, et les lacunes, les d\u00e9fauts, etc. sont \u00e9galement une source de contrainte. Lorsque la temp\u00e9rature de d\u00e9p\u00f4t augmente, l'\u00e9nergie cin\u00e9tique s'accro\u00eet, ce qui entra\u00eene la formation d'\u00eelots et d'agglom\u00e9rations pour former des noyaux plus gros, provoquant une r\u00e9duction du volume et une augmentation de la contrainte, ce qui conduit \u00e0 une contrainte de compression. En augmentant encore la temp\u00e9rature, l'\u00e9nergie de surface et la croissance des grains, la diffusion des atomes entre les limites intergranulaires et l'augmentation de la contrainte de compression. Lorsqu'il est d\u00e9pos\u00e9 entre 580 et 610\u00b0C, le film peut passer d'une contrainte de traction \u00e0 une contrainte de compression \u00e0 l'int\u00e9rieur du film. Lorsque la temp\u00e9rature continue d'augmenter, les grains se d\u00e9veloppent en colonnes, les atomes s'\u00e9tendent dans la direction verticale de la croissance et la contrainte de compression diminue progressivement. La direction de flexion des \u00e9chantillons \u00e9tant la m\u00eame, on peut constater que, dans une certaine plage de temp\u00e9rature, les contraintes internes du film se manifestent sous forme de contraintes de compression et qu'avec l'augmentation de la temp\u00e9rature, les contraintes de compression diminuent.<\/p><p>En outre, comme il n'y a pas de contrainte suppl\u00e9mentaire impos\u00e9e par d'autres films pendant le d\u00e9p\u00f4t de polysilicium, la contrainte totale du film peut \u00eatre simplifi\u00e9e comme la somme des contraintes internes et thermiques, dont la temp\u00e9rature est le principal facteur affectant les contraintes thermiques, et une augmentation de la temp\u00e9rature de d\u00e9p\u00f4t se traduira par une augmentation des contraintes internes du film.<\/p><p>On peut constater que les films de silicium polycristallin d\u00e9pos\u00e9s \u00e0 des temp\u00e9ratures \u00e9lev\u00e9es obtiennent des valeurs de gauchissement des plaquettes relativement faibles, ce qui prouve que la contrainte totale des films est principalement affect\u00e9e par les contraintes internes, qui d\u00e9pendent fortement des changements de temp\u00e9rature. Par cons\u00e9quent, \u00e0 condition que la qualit\u00e9 de la surface r\u00e9ponde aux exigences, le gauchissement des plaquettes de silicium peut \u00eatre am\u00e9lior\u00e9 en augmentant de mani\u00e8re appropri\u00e9e la temp\u00e9rature de d\u00e9p\u00f4t.<\/p>\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-91fb539 elementor-widget elementor-widget-text-editor\" data-id=\"91fb539\" data-element_type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t<h2>Effet de l'\u00e9paisseur du film sur le gauchissement de la plaquette<\/h2>\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-3b0940e elementor-widget elementor-widget-text-editor\" data-id=\"3b0940e\" data-element_type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t<p>L'\u00e9volution du gauchissement en fonction de l'\u00e9paisseur du film peut \u00eatre en grande partie li\u00e9e \u00e0 l'\u00e9volution des contraintes internes lors de la croissance du film. Le film est initialement soumis \u00e0 des contraintes de compression, qui se transforment ensuite progressivement en contraintes de traction et reviennent finalement \u00e0 des contraintes de compression. Ce comportement est \u00e9troitement li\u00e9 au processus de croissance pendant la phase de d\u00e9p\u00f4t du film. Dans un premier temps, le film se d\u00e9veloppe sous forme d'amas discrets ou d'\u00eelots \u00e0 la surface du substrat, et ces \u00eelots pr\u00e9sentent g\u00e9n\u00e9ralement des contraintes de compression dues aux contraintes superficielles ou interfaciales qui r\u00e9duisent l'\u00e9cart de r\u00e9seau entre les grains individuels relativement tr\u00e8s petits. Dans un deuxi\u00e8me temps, les \u00eelots se d\u00e9veloppent au point de commencer \u00e0 entrer en contact les uns avec les autres, ce qui entra\u00eene la formation de joints de grains et, par cons\u00e9quent, l'augmentation des contraintes de traction dans le film. L'agr\u00e9gation d'\u00eelots est un m\u00e9canisme de fracture \u00e9lastique inverse, la limite intergranulaire est consid\u00e9r\u00e9e comme une fissure, et le syst\u00e8me peut r\u00e9duire son \u00e9nergie libre en s'approchant de cette fissure en rempla\u00e7ant l'\u00e9nergie de surface \u00e9lev\u00e9e par une \u00e9nergie interfaciale plus faible. En s'approchant de la fissure ou du joint de grain, le mat\u00e9riau du film est soumis \u00e0 une contrainte de traction. Au cours de la troisi\u00e8me \u00e9tape, lorsque l'\u00e9paisseur du film augmente, les atomes de surface sont transf\u00e9r\u00e9s vers les limites intergranulaires, formant un film continu, et la contrainte du film commence \u00e0 diminuer, passant progressivement d'une contrainte de traction \u00e0 une contrainte de compression, qui augmente avec l'\u00e9paisseur. En outre, comme les conditions de r\u00e9action sont identiques \u00e0 l'exception des diff\u00e9rentes \u00e9paisseurs de d\u00e9p\u00f4t, on sait que les contraintes thermiques des films sont les m\u00eames. Par cons\u00e9quent, la variation totale de la contrainte est d\u00e9termin\u00e9e par la contrainte interne du film.<\/p><p>Le gauchissement des plaquettes de substrat a tendance \u00e0 diminuer avec l'augmentation de l'\u00e9paisseur du film. Cela correspond bien \u00e0 la troisi\u00e8me \u00e9tape de l'\u00e9volution de la contrainte interne du film au cours du processus de croissance. Par cons\u00e9quent, le gauchissement des plaquettes de substrat diminuera encore avec l'augmentation de l'\u00e9paisseur du film dans certaines conditions.<\/p>\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-4f54660 elementor-widget elementor-widget-heading\" data-id=\"4f54660\" data-element_type=\"widget\" data-widget_type=\"heading.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t<h2 class=\"elementor-heading-title elementor-size-default\">Effet du processus de recuit sur le gauchissement des plaquettes polycristallines scell\u00e9es \u00e0 l'arri\u00e8re<\/h2>\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-89a9664 elementor-widget elementor-widget-text-editor\" data-id=\"89a9664\" data-element_type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t<h2>Effet de la temp\u00e9rature de recuit sur le gauchissement des plaquettes polycristallines scell\u00e9es par l'arri\u00e8re<\/h2>\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-0509bb6 elementor-widget elementor-widget-text-editor\" data-id=\"0509bb6\" data-element_type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t<p>Apr\u00e8s le d\u00e9p\u00f4t double face de films de silicium multi-produits sur la surface de plaquettes mordanc\u00e9es \u00e0 l'acide \u00e0 l'aide de la m\u00e9thode LPCVD, le gauchissement des plaquettes avant et apr\u00e8s le recuit est rest\u00e9 pratiquement inchang\u00e9. Apr\u00e8s le polissage unilat\u00e9ral, le gauchissement de la plaquette de substrat a augment\u00e9 de mani\u00e8re significative. Cependant, avec l'augmentation de la temp\u00e9rature de recuit, le gauchissement tend \u00e0 diminuer, et autour de 1000\u2103 est le point critique du changement drastique du gauchissement, et le recuit \u00e0 plus de 1000\u2103 peut atteindre le contr\u00f4le efficace du gauchissement.<\/p><p>Pendant la croissance du film, les basses temp\u00e9ratures du processus entra\u00eenent une r\u00e9duction de la diffusion de surface, ce qui emp\u00eache les atomes de silicium absorb\u00e9s d'\u00eatre int\u00e9gr\u00e9s dans l'\u00e9quilibre d'\u00e9nergie le plus bas. C'est pourquoi les films tels qu'ils sont d\u00e9pos\u00e9s pr\u00e9sentent de nombreux d\u00e9fauts ponctuels, des lacunes, des dislocations, des limites intergranulaires, des contraintes accumul\u00e9es, etc. \u00c0 mesure que la temp\u00e9rature de recuit augmente, les lacunes deviennent mobiles et se transforment en dislocations, qui sont \u00e9galement activ\u00e9es et se d\u00e9placent vers la surface libre par reptation et glissement, lib\u00e9rant ainsi les contraintes. Au fur et \u00e0 mesure que la densit\u00e9 des d\u00e9fauts diminue, l'ensemble du film devient dense. La croissance des grains et la renucl\u00e9ation qui l'accompagne, sous l'effet de l'\u00e9nergie de surface, se poursuivent pendant le recuit. Au fur et \u00e0 mesure de la croissance des grains, les grains de plus petite taille sont consomm\u00e9s par les grains voisins de plus grande taille, ce qui augmente progressivement leur rapport de surface corporelle. Par cons\u00e9quent, \u00e0 mesure que la temp\u00e9rature de recuit augmente, le rel\u00e2chement des contraintes \u00e0 l'int\u00e9rieur du film s'accro\u00eet et le gauchissement de la plaquette diminue.<\/p>\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-58b6b9a elementor-widget elementor-widget-text-editor\" data-id=\"58b6b9a\" data-element_type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t<h2>Effet du temps de recuit sur le gauchissement des plaquettes polycristallines scell\u00e9es par l'arri\u00e8re<\/h2>\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-e0d356d elementor-widget elementor-widget-text-editor\" data-id=\"e0d356d\" data-element_type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t<p>\u00c0 une temp\u00e9rature de recuit de 900\u00b0C, le gauchissement des plaquettes diminue avec le temps de recuit, mais l'ampleur du changement diminue \u00e9galement. Aux temp\u00e9ratures de recuit de 1000\u00b0C et 1100\u00b0C, le gauchissement des plaquettes varie tr\u00e8s peu avec le temps de recuit. Cependant, dans les m\u00eames conditions, le gauchissement \u00e0 1000\u2103 est l\u00e9g\u00e8rement plus important que celui \u00e0 1100\u2103, et la diff\u00e9rence entre les deux est plus importante \u00e0 900\u2103. Lorsque la temp\u00e9rature de recuit est basse, le mouvement atomique est relativement lent, la lib\u00e9ration de la contrainte est plus retard\u00e9e, l'augmentation appropri\u00e9e du temps de recuit peut faire bouger l'atome sur une plus longue distance pour atteindre le point de lib\u00e9ration de la contrainte, peut am\u00e9liorer l\u00e9g\u00e8rement le gauchissement. La temp\u00e9rature de recuit est tr\u00e8s favorable \u00e0 l'am\u00e9lioration du gauchissement. Lorsque la temp\u00e9rature de recuit augmente, la diffusion de surface devient intense et les contraintes r\u00e9siduelles sont \u00e9limin\u00e9es. Pour les films de silicium multi-produits, un recuit sup\u00e9rieur \u00e0 1000\u2103 pendant 60 minutes permet de lib\u00e9rer les contraintes et d'obtenir un meilleur gauchissement.<\/p>\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-e36d5de elementor-widget elementor-widget-text-editor\" data-id=\"e36d5de\" data-element_type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t<p>En raison des diff\u00e9rents processus de pr\u00e9paration du film, du processus de traitement thermique et des exigences en mati\u00e8re d'\u00e9paisseur du film, qui entra\u00eenent diff\u00e9rents \u00e9tats de contrainte dans le film, les param\u00e8tres g\u00e9om\u00e9triques du film d\u00e9pos\u00e9 apr\u00e8s le polissage du substrat ont \u00e9galement des dimensions diff\u00e9rentes. Par cons\u00e9quent, les conditions du processus de pr\u00e9paration du film et du processus de traitement thermique peuvent \u00eatre correctement s\u00e9lectionn\u00e9es pour contr\u00f4ler la contrainte r\u00e9siduelle du film, et en m\u00eame temps, selon les diff\u00e9rentes exigences d'\u00e9paisseur du film, le changement de gauchissement apr\u00e8s le polissage du substrat peut \u00eatre grossi\u00e8rement d\u00e9duit, et la capacit\u00e9 de traitement du produit peut \u00eatre \u00e9valu\u00e9e de mani\u00e8re appropri\u00e9e. Les conclusions sp\u00e9cifiques sont les suivantes.<\/p><p>1) Dans les m\u00eames conditions, le gauchissement de la plaquette de silicium diminue progressivement \u00e0 mesure que la temp\u00e9rature de d\u00e9p\u00f4t du film augmente. \u00c0 des temp\u00e9ratures de d\u00e9p\u00f4t plus \u00e9lev\u00e9es, la valeur du gauchissement de la plaquette de substrat est relativement faible.<\/p><p>2. le gauchissement de la plaquette de substrat tend \u00e0 se r\u00e9duire avec l'augmentation de l'\u00e9paisseur du film. Cela correspond bien \u00e0 la troisi\u00e8me \u00e9tape de l'\u00e9volution de la contrainte interne du film au cours du processus de croissance. Par cons\u00e9quent, nous pouvons en d\u00e9duire que le gauchissement de la plaquette de substrat continuera \u00e0 diminuer avec l'augmentation de l'\u00e9paisseur du film.<\/p><p>3, avec l'augmentation de la temp\u00e9rature de recuit, le gauchissement de la plaquette de substrat tend \u00e0 diminuer. 1000 \u2103 environ est le point critique des changements drastiques du gauchissement, un recuit sup\u00e9rieur \u00e0 1000 \u2103 pendant 60 minutes peut \u00eatre r\u00e9alis\u00e9 sur le gauchissement d'un contr\u00f4le efficace.<\/p>\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-eb7a641 elementor-widget elementor-widget-text-editor\" data-id=\"eb7a641\" data-element_type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t<p>Nous proposons <a href=\"https:\/\/www.nanofab.com.cn\/fr\/services-personnalises-2\/technologie-de-revetement-laminage-en-couche-mince\/depot-chimique-en-phase-vapeur-traitement-a-facon\/\">D\u00e9p\u00f4t chimique en phase vapeur (CVD) Services de personnalisation OEM<\/a>N'h\u00e9sitez pas \u00e0 laisser un commentaire.<\/p>\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-cc21078 uael-mobile-wpf-button-justify uael-wpf-style-box uael-wpf-input-size-sm uael-wpf-button-left uael-wpf-btn-size-sm uael-wpf-highlight-style-default elementor-widget elementor-widget-uael-wpf-styler\" data-id=\"cc21078\" data-element_type=\"widget\" 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srcset=\"https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/03\/2890e32db03fae1fa2ab67a6ed9c0d8-300x195.png 300w, https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/03\/2890e32db03fae1fa2ab67a6ed9c0d8-18x12.png 18w, https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/03\/2890e32db03fae1fa2ab67a6ed9c0d8.png 640w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/><\/div>\n\t\t<\/a>\n\t\t\t\t<div class=\"elementor-post__text\">\n\t\t\t\t<h4 class=\"elementor-post__title\">\n\t\t\t<a href=\"https:\/\/www.nanofab.com.cn\/fr\/services-personnalises-2\/technologie-de-revetement-laminage-en-couche-mince\/depot-de-couches-atomiques-traitement-des-contrats-2\/\" >\n\t\t\t\tTraitement de substitution par d\u00e9p\u00f4t en couche atomique (ALD)\t\t\t<\/a>\n\t\t<\/h4>\n\t\t\t\t<div class=\"elementor-post__excerpt\">\n\t\t\t\t\t<\/div>\n\t\t\n\t\t<a class=\"elementor-post__read-more\" href=\"https:\/\/www.nanofab.com.cn\/fr\/services-personnalises-2\/technologie-de-revetement-laminage-en-couche-mince\/depot-de-couches-atomiques-traitement-des-contrats-2\/\" aria-label=\"En savoir plus sur le traitement des fonderies par d\u00e9p\u00f4t de couches atomiques (ALD)\" tabindex=\"-1\" >\n\t\t\tLire plus \"\t\t<\/a>\n\n\t\t\t\t<\/div>\n\t\t\t\t<\/article>\n\t\t\t\t<article class=\"elementor-post elementor-grid-item post-7344 page type-page status-publish has-post-thumbnail hentry category-process tag-process\">\n\t\t\t\t<a class=\"elementor-post__thumbnail__link\" href=\"https:\/\/www.nanofab.com.cn\/fr\/services-personnalises-2\/technologie-de-revetement-laminage-en-couche-mince\/depot-chimique-en-phase-vapeur-traitement-a-facon\/\" tabindex=\"-1\" >\n\t\t\t<div class=\"elementor-post__thumbnail\"><img loading=\"lazy\" decoding=\"async\" width=\"300\" height=\"200\" src=\"https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/03\/f394ed96-eaca-40cc-83f6-ebadaea95553-300x200.png\" class=\"attachment-medium size-medium wp-image-7347\" alt=\"\" srcset=\"https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/03\/f394ed96-eaca-40cc-83f6-ebadaea95553-300x200.png 300w, https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/03\/f394ed96-eaca-40cc-83f6-ebadaea95553-1024x684.png 1024w, https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/03\/f394ed96-eaca-40cc-83f6-ebadaea95553-768x513.png 768w, https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/03\/f394ed96-eaca-40cc-83f6-ebadaea95553-1536x1025.png 1536w, https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/03\/f394ed96-eaca-40cc-83f6-ebadaea95553-18x12.png 18w, https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/03\/elementor\/thumbs\/f394ed96-eaca-40cc-83f6-ebadaea95553-qlt2nzpy27w47wpv9hvjdczv85dnqtqc8q83uvppb4.png 360w, https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/03\/f394ed96-eaca-40cc-83f6-ebadaea95553.png 1600w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/><\/div>\n\t\t<\/a>\n\t\t\t\t<div class=\"elementor-post__text\">\n\t\t\t\t<h4 class=\"elementor-post__title\">\n\t\t\t<a href=\"https:\/\/www.nanofab.com.cn\/fr\/services-personnalises-2\/technologie-de-revetement-laminage-en-couche-mince\/depot-chimique-en-phase-vapeur-traitement-a-facon\/\" >\n\t\t\t\tTraitement de g\u00e9n\u00e9ration par d\u00e9p\u00f4t chimique en phase vapeur (CVD)\t\t\t<\/a>\n\t\t<\/h4>\n\t\t\t\t<div class=\"elementor-post__excerpt\">\n\t\t\t\t\t<\/div>\n\t\t\n\t\t<a class=\"elementor-post__read-more\" href=\"https:\/\/www.nanofab.com.cn\/fr\/services-personnalises-2\/technologie-de-revetement-laminage-en-couche-mince\/depot-chimique-en-phase-vapeur-traitement-a-facon\/\" aria-label=\"En savoir plus sur la sous-traitance du d\u00e9p\u00f4t chimique en phase vapeur (CVD)\" tabindex=\"-1\" >\n\t\t\tLire plus \"\t\t<\/a>\n\n\t\t\t\t<\/div>\n\t\t\t\t<\/article>\n\t\t\t\t<article class=\"elementor-post elementor-grid-item post-7355 page type-page status-publish has-post-thumbnail hentry category-process tag-process\">\n\t\t\t\t<a class=\"elementor-post__thumbnail__link\" href=\"https:\/\/www.nanofab.com.cn\/fr\/services-personnalises-2\/technologie-de-revetement-laminage-en-couche-mince\/quest-ce-que-le-depot-physique-en-phase-vapeur-2\/\" tabindex=\"-1\" >\n\t\t\t<div class=\"elementor-post__thumbnail\"><img loading=\"lazy\" decoding=\"async\" width=\"300\" height=\"200\" src=\"https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/03\/59c77cbc-ce7b-4fe7-99ce-ee924312b932-300x200.png\" class=\"attachment-medium size-medium wp-image-7357\" alt=\"\" srcset=\"https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/03\/59c77cbc-ce7b-4fe7-99ce-ee924312b932-300x200.png 300w, https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/03\/59c77cbc-ce7b-4fe7-99ce-ee924312b932-1024x683.png 1024w, https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/03\/59c77cbc-ce7b-4fe7-99ce-ee924312b932-768x512.png 768w, https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/03\/59c77cbc-ce7b-4fe7-99ce-ee924312b932-18x12.png 18w, https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/03\/elementor\/thumbs\/59c77cbc-ce7b-4fe7-99ce-ee924312b932-qlti2lfsi53oh54jrq611wpt5lt6dogutrcqlbec0w.png 360w, https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/03\/59c77cbc-ce7b-4fe7-99ce-ee924312b932.png 1508w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/><\/div>\n\t\t<\/a>\n\t\t\t\t<div class=\"elementor-post__text\">\n\t\t\t\t<h4 class=\"elementor-post__title\">\n\t\t\t<a href=\"https:\/\/www.nanofab.com.cn\/fr\/services-personnalises-2\/technologie-de-revetement-laminage-en-couche-mince\/quest-ce-que-le-depot-physique-en-phase-vapeur-2\/\" >\n\t\t\t\tTraitement de g\u00e9n\u00e9ration par d\u00e9p\u00f4t physique en phase vapeur (PVD)\t\t\t<\/a>\n\t\t<\/h4>\n\t\t\t\t<div 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class=\"elementor-widget-container\">\n\t\t\t<div class=\"elementor-heading-title elementor-size-default\">Lecture associ\u00e9e<\/div>\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-0550566 elementor-grid-1 elementor-posts--thumbnail-none elementor-grid-tablet-2 elementor-grid-mobile-1 elementor-widget elementor-widget-posts\" data-id=\"0550566\" data-element_type=\"widget\" data-settings=\"{&quot;classic_columns&quot;:&quot;1&quot;,&quot;classic_columns_tablet&quot;:&quot;2&quot;,&quot;classic_columns_mobile&quot;:&quot;1&quot;,&quot;classic_row_gap&quot;:{&quot;unit&quot;:&quot;px&quot;,&quot;size&quot;:35,&quot;sizes&quot;:[]},&quot;classic_row_gap_tablet&quot;:{&quot;unit&quot;:&quot;px&quot;,&quot;size&quot;:&quot;&quot;,&quot;sizes&quot;:[]},&quot;classic_row_gap_mobile&quot;:{&quot;unit&quot;:&quot;px&quot;,&quot;size&quot;:&quot;&quot;,&quot;sizes&quot;:[]}}\" data-widget_type=\"posts.classic\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t<div class=\"elementor-posts-container elementor-posts elementor-posts--skin-classic elementor-grid\">\n\t\t\t\t<article class=\"elementor-post elementor-grid-item post-7780 post type-post status-publish format-standard has-post-thumbnail hentry category-application\">\n\t\t\t\t<div class=\"elementor-post__text\">\n\t\t\t\t<h4 class=\"elementor-post__title\">\n\t\t\t<a href=\"https:\/\/www.nanofab.com.cn\/fr\/perspicacite-2\/application\/proprietes-et-applications-du-nitrure-de-titane-2\/\" >\n\t\t\t\tNitrure de titane\u4e28TiN Propri\u00e9t\u00e9s et applications\t\t\t<\/a>\n\t\t<\/h4>\n\t\t\t\t<div class=\"elementor-post__excerpt\">\n\t\t\t<p>Propri\u00e9t\u00e9s et applications du nitrure de titane Les couches minces de nitrure de titane (TiN) sont un \u00e9l\u00e9ment important de la technologie de l'information.<\/p>\n\t\t<\/div>\n\t\t\n\t\t<a class=\"elementor-post__read-more\" href=\"https:\/\/www.nanofab.com.cn\/fr\/perspicacite-2\/application\/proprietes-et-applications-du-nitrure-de-titane-2\/\" aria-label=\"Plus d&#039;informations sur Nitrure de titane \u4e28TiN Propri\u00e9t\u00e9s et applications\" tabindex=\"-1\" >\n\t\t\tLire plus \"\t\t<\/a>\n\n\t\t\t\t<\/div>\n\t\t\t\t<\/article>\n\t\t\t\t<article class=\"elementor-post elementor-grid-item post-8099 post type-post status-publish format-standard has-post-thumbnail hentry category-application\">\n\t\t\t\t<div class=\"elementor-post__text\">\n\t\t\t\t<h4 class=\"elementor-post__title\">\n\t\t\t<a href=\"https:\/\/www.nanofab.com.cn\/fr\/perspicacite-2\/application\/difference-entre-lpcvd-et-pecvd\/\" >\n\t\t\t\tDiff\u00e9rence entre LPCVD et PECVD\t\t\t<\/a>\n\t\t<\/h4>\n\t\t\t\t<div class=\"elementor-post__excerpt\">\n\t\t\t<p>Diff\u00e9rence entre LPCVD et PECVD Parvenir \u00e0 un niveau \u00e9lev\u00e9 dans un environnement \u00e0 faible tension<\/p>\n\t\t<\/div>\n\t\t\n\t\t<a class=\"elementor-post__read-more\" href=\"https:\/\/www.nanofab.com.cn\/fr\/perspicacite-2\/application\/difference-entre-lpcvd-et-pecvd\/\" aria-label=\"En savoir plus sur la diff\u00e9rence entre LPCVD et PECVD\" tabindex=\"-1\" >\n\t\t\tLire plus \"\t\t<\/a>\n\n\t\t\t\t<\/div>\n\t\t\t\t<\/article>\n\t\t\t\t<article class=\"elementor-post elementor-grid-item post-7931 post type-post status-publish format-standard has-post-thumbnail hentry category-application\">\n\t\t\t\t<div class=\"elementor-post__text\">\n\t\t\t\t<h4 class=\"elementor-post__title\">\n\t\t\t<a href=\"https:\/\/www.nanofab.com.cn\/fr\/perspicacite-2\/application\/ald-preparation-du-film-detain-2\/\" >\n\t\t\t\tPr\u00e9paration de films minces de nitrure de titane (TIN) par proc\u00e9d\u00e9 ALD\t\t\t<\/a>\n\t\t<\/h4>\n\t\t\t\t<div class=\"elementor-post__excerpt\">\n\t\t\t<p>Pr\u00e9paration de films minces de nitrure de titane (TiN) par le proc\u00e9d\u00e9 ALD (d\u00e9p\u00f4t par couche atomique)<\/p>\n\t\t<\/div>\n\t\t\n\t\t<a class=\"elementor-post__read-more\" href=\"https:\/\/www.nanofab.com.cn\/fr\/perspicacite-2\/application\/ald-preparation-du-film-detain-2\/\" aria-label=\"En savoir plus sur le proc\u00e9d\u00e9 ALD pour la pr\u00e9paration de films minces de nitrure de titane (TIN)\" tabindex=\"-1\" >\n\t\t\tLire plus \"\t\t<\/a>\n\n\t\t\t\t<\/div>\n\t\t\t\t<\/article>\n\t\t\t\t<\/div>\n\t\t\n\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-eb240b5 elementor-widget elementor-widget-heading\" data-id=\"eb240b5\" data-element_type=\"widget\" data-widget_type=\"heading.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t<p class=\"elementor-heading-title elementor-size-default\"><a href=\"https:\/\/www.nanofab.com.cn\/fr\/perspectives-2\/\">Plus d'informations...<\/a><\/p>\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t<\/div>","protected":false},"excerpt":{"rendered":"<p>Films minces de silicium polycristallin\u4e28Influen\u00e7ant le gauchissement des plaquettes de silicium Dans de nombreux cas, les contraintes peuvent entra\u00eener des r\u00e9sultats ind\u00e9sirables. L'utilisation de la technique LPCVD pour d\u00e9poser des couches minces de silicium polycristallin pour [...]<\/p>","protected":false},"author":3,"featured_media":7762,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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