{"id":7571,"date":"2024-04-08T10:51:43","date_gmt":"2024-04-08T02:51:43","guid":{"rendered":"https:\/\/www.nanofab.com.cn\/?p=7571"},"modified":"2024-05-28T10:14:16","modified_gmt":"2024-05-28T02:14:16","slug":"effect-of-sputtering-coating-on-thin-films","status":"publish","type":"post","link":"https:\/\/www.nanofab.com.cn\/fr\/perspicacite-2\/application\/\u6e85\u5c04\u9540\u819c-2\/","title":{"rendered":"Quels sont les facteurs qui influencent le processus de rev\u00eatement par pulv\u00e9risation cathodique sur les mat\u00e9riaux en couches minces ?"},"content":{"rendered":"<div data-elementor-type=\"wp-post\" data-elementor-id=\"7571\" class=\"elementor elementor-7571\" data-elementor-post-type=\"post\">\n\t\t\t\t\t\t<section class=\"elementor-section elementor-top-section elementor-element elementor-element-461cc61 elementor-section-boxed elementor-section-height-default elementor-section-height-default\" data-id=\"461cc61\" data-element_type=\"section\" data-settings=\"{&quot;jet_parallax_layout_list&quot;:[]}\">\n\t\t\t\t\t\t<div class=\"elementor-container elementor-column-gap-default\">\n\t\t\t\t\t<div class=\"elementor-column elementor-col-100 elementor-top-column elementor-element elementor-element-384b55d\" data-id=\"384b55d\" data-element_type=\"column\">\n\t\t\t<div class=\"elementor-widget-wrap elementor-element-populated\">\n\t\t\t\t\t\t<section class=\"elementor-section elementor-inner-section elementor-element elementor-element-13285ed elementor-section-boxed elementor-section-height-default elementor-section-height-default\" data-id=\"13285ed\" data-element_type=\"section\" data-settings=\"{&quot;jet_parallax_layout_list&quot;:[]}\">\n\t\t\t\t\t\t<div class=\"elementor-container elementor-column-gap-no\">\n\t\t\t\t\t<div class=\"elementor-column elementor-col-50 elementor-inner-column elementor-element elementor-element-44dd20d\" data-id=\"44dd20d\" data-element_type=\"column\">\n\t\t\t<div class=\"elementor-widget-wrap elementor-element-populated\">\n\t\t\t\t\t\t<div class=\"elementor-element elementor-element-429f062 elementor-widget elementor-widget-heading\" data-id=\"429f062\" data-element_type=\"widget\" data-widget_type=\"heading.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t<style>\/*! elementor - v3.20.0 - 20-03-2024 *\/\n.elementor-heading-title{padding:0;margin:0;line-height:1}.elementor-widget-heading .elementor-heading-title[class*=elementor-size-]>a{color:inherit;font-size:inherit;line-height:inherit}.elementor-widget-heading .elementor-heading-title.elementor-size-small{font-size:15px}.elementor-widget-heading .elementor-heading-title.elementor-size-medium{font-size:19px}.elementor-widget-heading .elementor-heading-title.elementor-size-large{font-size:29px}.elementor-widget-heading .elementor-heading-title.elementor-size-xl{font-size:39px}.elementor-widget-heading .elementor-heading-title.elementor-size-xxl{font-size:59px}<\/style><h1 class=\"elementor-heading-title elementor-size-default\">Quels sont les facteurs qui influencent le processus de rev\u00eatement par pulv\u00e9risation cathodique sur les mat\u00e9riaux en couches minces ?<\/h1>\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-d1ad59a elementor-widget elementor-widget-post-info\" data-id=\"d1ad59a\" data-element_type=\"widget\" data-widget_type=\"post-info.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t<link rel=\"stylesheet\" href=\"https:\/\/www.nanofab.com.cn\/wp-content\/plugins\/elementor\/assets\/css\/widget-icon-list.min.css\"><link rel=\"stylesheet\" href=\"https:\/\/www.nanofab.com.cn\/wp-content\/plugins\/elementor-pro\/assets\/css\/widget-theme-elements.min.css\">\t\t<ul class=\"elementor-icon-list-items elementor-post-info\">\n\t\t\t\t\t\t\t\t<li class=\"elementor-icon-list-item elementor-repeater-item-577f4c4\" itemprop=\"datePublished\">\n\t\t\t\t\t\t<a href=\"https:\/\/www.nanofab.com.cn\/fr\/2024\/04\/08\/\">\n\t\t\t\t\t\t\t\t\t\t\t\t\t\t<span class=\"elementor-icon-list-text elementor-post-info__item elementor-post-info__item--type-date\">\n\t\t\t\t\t\t\t\t\t\t<time>2024-04-08<\/time>\t\t\t\t\t<\/span>\n\t\t\t\t\t\t\t\t\t<\/a>\n\t\t\t\t<\/li>\n\t\t\t\t<\/ul>\n\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-c73d98a elementor-widget elementor-widget-image\" data-id=\"c73d98a\" data-element_type=\"widget\" data-widget_type=\"image.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t<style>\/*! elementor - v3.20.0 - 20-03-2024 *\/\n.elementor-widget-image{text-align:center}.elementor-widget-image a{display:inline-block}.elementor-widget-image a img[src$=\".svg\"]{width:48px}.elementor-widget-image img{vertical-align:middle;display:inline-block}<\/style>\t\t\t\t\t\t\t\t\t\t<img fetchpriority=\"high\" decoding=\"async\" width=\"1024\" height=\"768\" src=\"https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/04\/d4bd772da2d2f10b5d0b7af283bfaf3-1024x768.png\" class=\"attachment-large size-large wp-image-7572\" alt=\"\" srcset=\"https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/04\/d4bd772da2d2f10b5d0b7af283bfaf3-1024x768.png 1024w, https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/04\/d4bd772da2d2f10b5d0b7af283bfaf3-300x225.png 300w, https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/04\/d4bd772da2d2f10b5d0b7af283bfaf3-768x576.png 768w, https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/04\/d4bd772da2d2f10b5d0b7af283bfaf3-1536x1152.png 1536w, https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/04\/d4bd772da2d2f10b5d0b7af283bfaf3-16x12.png 16w, https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/04\/d4bd772da2d2f10b5d0b7af283bfaf3.png 1920w\" sizes=\"(max-width: 1024px) 100vw, 1024px\" \/>\t\t\t\t\t\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-1b88541 elementor-widget elementor-widget-text-editor\" data-id=\"1b88541\" data-element_type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t<style>\/*! elementor - v3.20.0 - 20-03-2024 *\/\n.elementor-widget-text-editor.elementor-drop-cap-view-stacked .elementor-drop-cap{background-color:#69727d;color:#fff}.elementor-widget-text-editor.elementor-drop-cap-view-framed .elementor-drop-cap{color:#69727d;border:3px solid;background-color:transparent}.elementor-widget-text-editor:not(.elementor-drop-cap-view-default) .elementor-drop-cap{margin-top:8px}.elementor-widget-text-editor:not(.elementor-drop-cap-view-default) .elementor-drop-cap-letter{width:1em;height:1em}.elementor-widget-text-editor .elementor-drop-cap{float:left;text-align:center;line-height:1;font-size:50px}.elementor-widget-text-editor .elementor-drop-cap-letter{display:inline-block}<\/style>\t\t\t\t<p>Gr\u00e2ce au bombardement de la surface solide par des particules \u00e0 haute \u00e9nergie (g\u00e9n\u00e9ralement des ions positifs acc\u00e9l\u00e9r\u00e9s par un champ \u00e9lectrique), la surface solide des atomes, des mol\u00e9cules et des particules incidentes \u00e0 haute \u00e9nergie \u00e9change de l'\u00e9nergie cin\u00e9tique avec la surface solide, ce qui provoque un ph\u00e9nom\u00e8ne connu sous le nom de pulv\u00e9risation cathodique. Les atomes (ou groupes d'atomes) pulv\u00e9ris\u00e9s ont une certaine \u00e9nergie, ils peuvent \u00eatre red\u00e9pos\u00e9s avec coh\u00e9sion sur la surface du substrat solide pour former un film mince, connu sous le nom de rev\u00eatement par pulv\u00e9risation.<\/p>\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-5ba7830 elementor-widget elementor-widget-heading\" data-id=\"5ba7830\" data-element_type=\"widget\" data-widget_type=\"heading.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t<h2 class=\"elementor-heading-title elementor-size-default\">Pulv\u00e9risation de mat\u00e9riaux en couches minces<\/h2>\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-989d7db elementor-widget elementor-widget-text-editor\" data-id=\"989d7db\" data-element_type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t<p>Les propri\u00e9t\u00e9s macroscopiques des mat\u00e9riaux sont \u00e9troitement li\u00e9es \u00e0 leur microstructure. Il est donc particuli\u00e8rement important d'utiliser des m\u00e9thodes \u00e9conomiques et efficaces pour modifier la structure organisationnelle du mat\u00e9riau et conf\u00e9rer ainsi de nouvelles propri\u00e9t\u00e9s composites \u00e0 la surface du mat\u00e9riau. Dans les premi\u00e8res \u00e9tapes de la pr\u00e9paration d'un mat\u00e9riau en couche mince par d\u00e9p\u00f4t par pulv\u00e9risation cathodique, les facteurs d'influence comprennent la qualit\u00e9 de la source de pulv\u00e9risation, l'\u00e9nergie et la distribution angulaire des atomes pulv\u00e9ris\u00e9s, ainsi que le rendement et la vitesse de pulv\u00e9risation. Dans les \u00e9tapes ult\u00e9rieures du processus de pr\u00e9paration, des facteurs tels que le gaz de pulv\u00e9risation, la tension de pulv\u00e9risation et la tension du substrat, la temp\u00e9rature du substrat, la qualit\u00e9 de la cible, le vide et la pression de l'air de travail de la pulv\u00e9risation sont les principaux facteurs qui influencent la composition et l'organisation de la couche mince. Tout en assurant la stabilit\u00e9 de l'organisation du mat\u00e9riau de la couche mince, l'homog\u00e9n\u00e9it\u00e9 et la puret\u00e9 sont \u00e9galement des indicateurs importants qui doivent \u00eatre pris en compte, car ils sont cruciaux pour la s\u00e9lection et l'am\u00e9lioration des diff\u00e9rentes technologies de rev\u00eatement par pulv\u00e9risation cathodique.<\/p>\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-bd24daf elementor-widget elementor-widget-heading\" data-id=\"bd24daf\" data-element_type=\"widget\" data-widget_type=\"heading.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t<h2 class=\"elementor-heading-title elementor-size-default\">Pulv\u00e9risation et effets des mat\u00e9riaux<\/h2>\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-226a0e0 elementor-widget elementor-widget-text-editor\" data-id=\"226a0e0\" data-element_type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t<p><strong>1. pulv\u00e9risation cathodique de m\u00e9taux et de semi-conducteurs<\/strong><\/p><p>Pulv\u00e9risation secondaire, pulv\u00e9risation tertiaire, et<a href=\"https:\/\/www.nanofab.com.cn\/fr\/perspicacite-2\/application\/quest-ce-que-la-pulverisation-cathodique-magnetron-2\/\">pulv\u00e9risation magn\u00e9tron<\/a>Ces m\u00e9thodes courantes de pulv\u00e9risation se distinguent principalement par la structure de l'\u00e9lectrode.<\/p><p>La pulv\u00e9risation secondaire DC ordinaire consiste \u00e0 appliquer un potentiel DC n\u00e9gatif directement \u00e0 la cible de pulv\u00e9risation et \u00e0 placer le cadre du substrat de la pi\u00e8ce rev\u00eatue en tant qu'anode. Les atomes du mat\u00e9riau cible sont pulv\u00e9ris\u00e9s \u00e0 partir de la cible cathodique et d\u00e9pos\u00e9s sur la surface du substrat pour former un film mince. Dans le processus de pulv\u00e9risation, la d\u00e9charge d'Ar est dans un \u00e9tat de d\u00e9charge lumineuse anormale, et la d\u00e9charge lumineuse couvre toute la surface de la cible de la cathode, ce qui rend la pulv\u00e9risation de la cible et la formation d'un film sur la surface du substrat uniformes. Dans l'\u00e9tat de d\u00e9charge lumineuse anormale, la vitesse de d\u00e9p\u00f4t peut \u00eatre modifi\u00e9e en ajustant la tension de pulv\u00e9risation et en changeant le courant de pulv\u00e9risation. L'avantage de la pulv\u00e9risation secondaire \u00e0 courant continu est que le dispositif est simple et convient \u00e0 la pulv\u00e9risation de cibles m\u00e9talliques et semi-conductrices. Cependant, la vitesse de d\u00e9p\u00f4t est faible lors de la pulv\u00e9risation ; en raison de la tension \u00e9lev\u00e9e de la d\u00e9charge directe, le substrat est tr\u00e8s facilement endommag\u00e9 par l'augmentation de la temp\u00e9rature ; la s\u00e9lection des conditions de pression de l'air est difficile, la d\u00e9charge \u00e0 basse pression ne peut pas \u00eatre maintenue, la qualit\u00e9 du film d\u00e9pos\u00e9 par haute pression est m\u00e9diocre ; la pulv\u00e9risation de mat\u00e9riaux isolants n'est pas applicable.<\/p><p>La pulv\u00e9risation tertiaire \u00e0 courant continu consiste \u00e0 introduire une cathode et une anode \u00e0 filament chaud dans un dispositif de pulv\u00e9risation secondaire, la cathode du filament \u00e9tant mise \u00e0 la terre et l'anode \u00e0 50-100 V. Le filament \u00e9met des \u00e9lectrons \u00e0 haute temp\u00e9rature, qui sont acc\u00e9l\u00e9r\u00e9s par un champ \u00e9lectrique, puis entrent en collision et s'ionisent avec les atomes d'Ar au cours de leur d\u00e9placement vers l'anode pour cr\u00e9er une d\u00e9charge d'arc \u00e0 cathode chaude non auto-entretenue. La pulv\u00e9risation en trois \u00e9tapes permet d'augmenter le courant de d\u00e9charge, de contr\u00f4ler compl\u00e8tement le courant et la charge des ions de mani\u00e8re ind\u00e9pendante et de maintenir la d\u00e9charge \u00e0 faible tension, ce qui est sup\u00e9rieur \u00e0 la pulv\u00e9risation en deux \u00e9tapes. En m\u00eame temps, la pulv\u00e9risation en trois \u00e9tapes endommage moins le substrat par rayonnement et peut \u00eatre utilis\u00e9e pour fabriquer des couches minces pour les circuits int\u00e9gr\u00e9s et les dispositifs \u00e0 semi-conducteurs. Cependant, la structure du dispositif est plus complexe que celle de la d\u00e9charge \u00e0 cathode froide, et il est difficile de pr\u00e9parer un plasma avec une grande zone de couverture et une densit\u00e9 uniforme, et il y a des probl\u00e8mes tels que la consommation de filament, de sorte que ce processus de pr\u00e9paration n'est presque plus utilis\u00e9 ces derni\u00e8res ann\u00e9es.<\/p><p>La technologie de la pulv\u00e9risation cathodique magn\u00e9tron consiste \u00e0 \u00e9tablir un champ magn\u00e9tique ferm\u00e9 en forme d'anneau sur la surface de la cible de la pulv\u00e9risation secondaire, qui pr\u00e9sente une distribution de champ magn\u00e9tique transversal parall\u00e8le \u00e0 la surface de la cible ; le champ magn\u00e9tique est g\u00e9n\u00e9r\u00e9 par le corps de la cible de l'aimant ; c'est actuellement l'une des principales technologies de rev\u00eatement. La structure du dispositif de rev\u00eatement par pulv\u00e9risation magn\u00e9tron est appliqu\u00e9e dans le champ magn\u00e9tique de la cible cathodique, l'utilisation des effets physiques du champ magn\u00e9tique sur les \u00e9lectrons de liaison et l'extension efficace de la trajectoire des \u00e9lectrons, ce qui augmente le taux de collision entre l'\u00e9lectrode et l'atome de gaz pour augmenter le taux d'ionisation du gaz, de sorte que des ions plus \u00e9nerg\u00e9tiques bombardent le mat\u00e9riau de la cible. D'apr\u00e8s le principe de la pulv\u00e9risation magn\u00e9tron, la cl\u00e9 de la technologie de pulv\u00e9risation magn\u00e9tron est d'\u00e9tablir un pi\u00e8ge efficace pour le faisceau d'\u00e9lectrons. La pulv\u00e9risation magn\u00e9tron est une technologie de pulv\u00e9risation \u00e0 grande vitesse et \u00e0 basse temp\u00e9rature ; sa pression de gaz de travail est de 0,1 Pa, la densit\u00e9 de courant de la cible peut atteindre des dizaines de milliamp\u00e8res, et la vitesse de d\u00e9p\u00f4t atteint plusieurs centaines de nanom\u00e8tres \u00e0 2000 nm par minute.<\/p><p>\u00c0 l'heure actuelle, la technologie de rev\u00eatement par pulv\u00e9risation magn\u00e9tron a un large \u00e9ventail d'applications dans la production r\u00e9elle, gr\u00e2ce \u00e0 ses caract\u00e9ristiques significatives, \u00e0 savoir : un large \u00e9ventail d'ajustements dynamiques des param\u00e8tres de fonctionnement, la vitesse de d\u00e9p\u00f4t et l'\u00e9paisseur du film peuvent \u00eatre facilement contr\u00f4l\u00e9es ; pas de probl\u00e8me de particules de gouttelettes dans la couche de film ; un large \u00e9ventail de mat\u00e9riaux cibles \u00e0 choisir, presque tous les m\u00e9taux, alliages et mat\u00e9riaux c\u00e9ramiques peuvent \u00eatre utilis\u00e9s ; et l'utilisation d'\u00e9lectrodes magn\u00e9tron peut am\u00e9liorer efficacement la vitesse de pulv\u00e9risation. Par cons\u00e9quent, la vitesse de gravure par pulv\u00e9risation sur la surface de la cible et la vitesse de d\u00e9p\u00f4t du film sur la surface du substrat sont toutes deux tr\u00e8s \u00e9lev\u00e9es. En m\u00eame temps, la pulv\u00e9risation magn\u00e9tron pr\u00e9sente les avantages d'une faible \u00e9nergie et d'une faible temp\u00e9rature du substrat. Cependant, la cible de pulv\u00e9risation magn\u00e9tron traditionnelle utilisant un champ magn\u00e9tique irr\u00e9gulier, l'effet de convergence locale du plasma entra\u00eenera une gravure irr\u00e9guli\u00e8re. En outre, le mat\u00e9riau cible ne peut pas avoir une perm\u00e9abilit\u00e9 magn\u00e9tique \u00e9lev\u00e9e, ce qui constitue les inconv\u00e9nients de la pulv\u00e9risation magn\u00e9tron traditionnelle.<\/p><p><strong>2. pulv\u00e9risation cathodique de mat\u00e9riaux isolants<\/strong><\/p><p>Du point de vue de la structure du dispositif, la pulv\u00e9risation cathodique et le rev\u00eatement par pulv\u00e9risation magn\u00e9tron \u00e0 courant continu n\u00e9cessitent l'application de potentiels n\u00e9gatifs sur la cible de pulv\u00e9risation, ce qui exige que le mat\u00e9riau cible soit un bon conducteur et n'est pas applicable \u00e0 la pr\u00e9paration de films di\u00e9lectriques isolants. \u00c0 cet \u00e9gard, la technologie de pulv\u00e9risation RF peut \u00eatre utilis\u00e9e pour remplacer l'alimentation \u00e9lectrique du dispositif de pulv\u00e9risation \u00e0 courant continu par une alimentation \u00e9lectrique \u00e0 radiofr\u00e9quences. Dans le processus de pulv\u00e9risation, la polarit\u00e9 de l'alimentation est commut\u00e9e en fonction du cycle, et les ions positifs et les \u00e9lectrons dans le plasma RF entre le p\u00f4le cible et le substrat bombardent alternativement la cible isolante pour produire la pulv\u00e9risation.<\/p><p>La pulv\u00e9risation RF \u00e9vite la dispersion importante des atomes et am\u00e9liore le taux de d\u00e9p\u00f4t par pulv\u00e9risation. En m\u00eame temps, les particules pulv\u00e9ris\u00e9es perdent moins d'\u00e9nergie pendant leur vol et ont une \u00e9nergie plus \u00e9lev\u00e9e lorsqu'elles atteignent le substrat, ce qui permet d'am\u00e9liorer la force d'adh\u00e9rence et la densification de la couche de film. En m\u00eame temps, la pulv\u00e9risation RF r\u00e9duit efficacement la d\u00e9pendance de la d\u00e9charge \u00e0 l'\u00e9gard des \u00e9lectrons secondaires et abaisse la tension de claquage, ce qui permet de pulv\u00e9riser n'importe quel mat\u00e9riau, y compris les mat\u00e9riaux di\u00e9lectriques. Cependant, comme la structure du dispositif de pulv\u00e9risation RF n'est pas fondamentalement diff\u00e9rente de celle de la pulv\u00e9risation secondaire, il existe \u00e9galement des inconv\u00e9nients tels qu'une faible vitesse de d\u00e9p\u00f4t, une temp\u00e9rature \u00e9lev\u00e9e du substrat et une mauvaise uniformit\u00e9 de la pulv\u00e9risation.<\/p><p><strong>3. pulv\u00e9risation cathodique de couches minces compos\u00e9es<\/strong><\/p><p>La pulv\u00e9risation d'alliages et de compos\u00e9s diff\u00e8re grandement de la pulv\u00e9risation de solides \u00e0 un seul atome. \u00c9tant donn\u00e9 que les \u00e9l\u00e9ments constituant les solides ont des rendements de pulv\u00e9risation diff\u00e9rents les uns des autres, la pr\u00e9paration de films compos\u00e9s peut \u00eatre effectu\u00e9e par la m\u00e9thode de pulv\u00e9risation r\u00e9active en plus de la m\u00e9thode de pulv\u00e9risation par radiofr\u00e9quence. En d'autres termes, dans le processus de rev\u00eatement par pulv\u00e9risation, le gaz de r\u00e9action introduit \u00e0 un stade ult\u00e9rieur r\u00e9agit avec le mat\u00e9riau cible pulv\u00e9ris\u00e9 et se d\u00e9pose sur la surface du substrat pour obtenir un film mince dont la composition est diff\u00e9rente de celle du mat\u00e9riau cible. Les avantages de la pulv\u00e9risation r\u00e9active sont les suivants : le mat\u00e9riau cible et le gaz r\u00e9actif peuvent facilement atteindre une grande puret\u00e9, ce qui favorise la pr\u00e9paration de films compos\u00e9s de grande puret\u00e9 ; la composition du film peut \u00eatre ajust\u00e9e artificiellement pour r\u00e9guler les caract\u00e9ristiques du film ; pendant tout le processus de d\u00e9p\u00f4t r\u00e9actif, le substrat a une faible \u00e9l\u00e9vation de temp\u00e9rature, ce qui peut \u00eatre utilis\u00e9 pour pr\u00e9parer des films homog\u00e8nes sur de grandes surfaces et r\u00e9aliser une production industrialis\u00e9e. Cependant, dans le fonctionnement r\u00e9el du processus, la pr\u00e9paration des cibles compos\u00e9es est difficile, le processus de pulv\u00e9risation r\u00e9active DC est instable, le processus est difficile \u00e0 contr\u00f4ler, ce qui provoque facilement l'empoisonnement des cibles, l'arc \u00e9lectrique entre la source de la cible et la surface de la pi\u00e8ce et d'autres ph\u00e9nom\u00e8nes, ces probl\u00e8mes constituent de s\u00e9rieuses contraintes pour le d\u00e9veloppement et la promotion de la technologie de la pulv\u00e9risation r\u00e9active.<\/p><p>Les ph\u00e9nom\u00e8nes d'empoisonnement de la cible, de d\u00e9charge d'arc et de disparition de l'anode dans la pulv\u00e9risation r\u00e9active peuvent \u00eatre r\u00e9solus en changeant la fr\u00e9quence de l'alimentation \u00e9lectrique de la cible de pulv\u00e9risation. L'alimentation \u00e9lectrique puls\u00e9e \u00e0 moyenne fr\u00e9quence est progressivement devenue un nouveau mode d'alimentation \u00e9lectrique pour la pulv\u00e9risation r\u00e9active compos\u00e9e, et la fr\u00e9quence de cette alimentation \u00e9lectrique se situe entre le courant continu et la radiofr\u00e9quence. Dans le processus de pulv\u00e9risation cathodique magn\u00e9tron \u00e0 moyenne fr\u00e9quence, les deux cibles jumelles alternent p\u00e9riodiquement en tant que cathode et anode sous l'action d'un courant alternatif suspendu (CA), de sorte qu'elles sont pulv\u00e9ris\u00e9es dans un cycle round-robin. Le film isolant pr\u00e9par\u00e9 par l'\u00e9quipement de pulv\u00e9risation r\u00e9active \u00e0 fr\u00e9quence interm\u00e9diaire est pratiquement exempt de grosses particules par rapport \u00e0 la pulv\u00e9risation \u00e0 courant continu, et la couche de film est plus dense. En outre, la vitesse de d\u00e9p\u00f4t \u00e9lev\u00e9e, les conditions de travail stables, le faible co\u00fbt de production et la temp\u00e9rature \u00e9lev\u00e9e du substrat pendant le processus de pulv\u00e9risation sont propices \u00e0 l'am\u00e9lioration de la qualit\u00e9 du film et de la force d'adh\u00e9rence.<\/p>\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-4f8fdd3 elementor-widget elementor-widget-text-editor\" data-id=\"4f8fdd3\" data-element_type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t<p>Nous proposons <a href=\"https:\/\/www.nanofab.com.cn\/fr\/services-personnalises-2\/technologie-de-revetement-laminage-en-couche-mince\/quest-ce-que-le-depot-physique-en-phase-vapeur-2\/\">Service de personnalisation de la fonderie par pulv\u00e9risation cathodique magn\u00e9tron<\/a>N'h\u00e9sitez pas \u00e0 laisser un 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src=\"https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/03\/f394ed96-eaca-40cc-83f6-ebadaea95553-300x200.png\" class=\"attachment-medium size-medium wp-image-7347\" alt=\"\" srcset=\"https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/03\/f394ed96-eaca-40cc-83f6-ebadaea95553-300x200.png 300w, https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/03\/f394ed96-eaca-40cc-83f6-ebadaea95553-1024x684.png 1024w, https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/03\/f394ed96-eaca-40cc-83f6-ebadaea95553-768x513.png 768w, https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/03\/f394ed96-eaca-40cc-83f6-ebadaea95553-1536x1025.png 1536w, https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/03\/f394ed96-eaca-40cc-83f6-ebadaea95553-18x12.png 18w, https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/03\/elementor\/thumbs\/f394ed96-eaca-40cc-83f6-ebadaea95553-qlt2nzpy27w47wpv9hvjdczv85dnqtqc8q83uvppb4.png 360w, https:\/\/www.nanofab.com.cn\/wp-content\/uploads\/2024\/03\/f394ed96-eaca-40cc-83f6-ebadaea95553.png 1600w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/><\/div>\n\t\t<\/a>\n\t\t\t\t<div class=\"elementor-post__text\">\n\t\t\t\t<h4 class=\"elementor-post__title\">\n\t\t\t<a href=\"https:\/\/www.nanofab.com.cn\/fr\/services-personnalises-2\/technologie-de-revetement-laminage-en-couche-mince\/depot-chimique-en-phase-vapeur-traitement-a-facon\/\" >\n\t\t\t\tTraitement de g\u00e9n\u00e9ration par d\u00e9p\u00f4t chimique en phase vapeur (CVD)\t\t\t<\/a>\n\t\t<\/h4>\n\t\t\t\t<div class=\"elementor-post__excerpt\">\n\t\t\t\t\t<\/div>\n\t\t\n\t\t<a class=\"elementor-post__read-more\" href=\"https:\/\/www.nanofab.com.cn\/fr\/services-personnalises-2\/technologie-de-revetement-laminage-en-couche-mince\/depot-chimique-en-phase-vapeur-traitement-a-facon\/\" aria-label=\"En savoir plus sur la sous-traitance du d\u00e9p\u00f4t chimique en phase vapeur (CVD)\" tabindex=\"-1\" >\n\t\t\tLire plus 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class=\"elementor-widget-container\">\n\t\t\t<div class=\"elementor-heading-title elementor-size-default\">Lecture associ\u00e9e<\/div>\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-eea4c0f elementor-grid-1 elementor-posts--thumbnail-none elementor-grid-tablet-2 elementor-grid-mobile-1 elementor-widget elementor-widget-posts\" data-id=\"eea4c0f\" data-element_type=\"widget\" data-settings=\"{&quot;classic_columns&quot;:&quot;1&quot;,&quot;classic_columns_tablet&quot;:&quot;2&quot;,&quot;classic_columns_mobile&quot;:&quot;1&quot;,&quot;classic_row_gap&quot;:{&quot;unit&quot;:&quot;px&quot;,&quot;size&quot;:35,&quot;sizes&quot;:[]},&quot;classic_row_gap_tablet&quot;:{&quot;unit&quot;:&quot;px&quot;,&quot;size&quot;:&quot;&quot;,&quot;sizes&quot;:[]},&quot;classic_row_gap_mobile&quot;:{&quot;unit&quot;:&quot;px&quot;,&quot;size&quot;:&quot;&quot;,&quot;sizes&quot;:[]}}\" data-widget_type=\"posts.classic\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t<div class=\"elementor-posts-container elementor-posts elementor-posts--skin-classic elementor-grid\">\n\t\t\t\t<article class=\"elementor-post elementor-grid-item post-7336 post type-post status-publish format-standard has-post-thumbnail hentry category-application\">\n\t\t\t\t<div class=\"elementor-post__text\">\n\t\t\t\t<h4 class=\"elementor-post__title\">\n\t\t\t<a href=\"https:\/\/www.nanofab.com.cn\/fr\/perspicacite-2\/application\/quest-ce-que-le-depot-physique-en-phase-vapeur\/\" >\n\t\t\t\tClassification, caract\u00e9ristiques et applications du d\u00e9p\u00f4t physique en phase vapeur (PVD)\t\t\t<\/a>\n\t\t<\/h4>\n\t\t\t\t<div class=\"elementor-post__excerpt\">\n\t\t\t<p>Classification, caract\u00e9ristiques et applications du d\u00e9p\u00f4t physique en phase vapeur (PVD) D\u00e9p\u00f4t physique en phase vapeur (PVD)<\/p>\n\t\t<\/div>\n\t\t\n\t\t<a class=\"elementor-post__read-more\" href=\"https:\/\/www.nanofab.com.cn\/fr\/perspicacite-2\/application\/quest-ce-que-le-depot-physique-en-phase-vapeur\/\" aria-label=\"En savoir plus sur le d\u00e9p\u00f4t physique en phase vapeur (PVD) Classification, caract\u00e9ristiques et applications\" tabindex=\"-1\" >\n\t\t\tLire plus \"\t\t<\/a>\n\n\t\t\t\t<\/div>\n\t\t\t\t<\/article>\n\t\t\t\t<article class=\"elementor-post elementor-grid-item post-7931 post type-post status-publish format-standard has-post-thumbnail hentry category-application\">\n\t\t\t\t<div class=\"elementor-post__text\">\n\t\t\t\t<h4 class=\"elementor-post__title\">\n\t\t\t<a href=\"https:\/\/www.nanofab.com.cn\/fr\/perspicacite-2\/application\/ald-preparation-du-film-detain-2\/\" >\n\t\t\t\tPr\u00e9paration de films minces de nitrure de titane (TIN) par proc\u00e9d\u00e9 ALD\t\t\t<\/a>\n\t\t<\/h4>\n\t\t\t\t<div class=\"elementor-post__excerpt\">\n\t\t\t<p>Pr\u00e9paration de films minces de nitrure de titane (TiN) par le proc\u00e9d\u00e9 ALD (d\u00e9p\u00f4t par couche atomique)<\/p>\n\t\t<\/div>\n\t\t\n\t\t<a class=\"elementor-post__read-more\" href=\"https:\/\/www.nanofab.com.cn\/fr\/perspicacite-2\/application\/ald-preparation-du-film-detain-2\/\" aria-label=\"En savoir plus sur le proc\u00e9d\u00e9 ALD pour la pr\u00e9paration de films minces de nitrure de titane (TIN)\" tabindex=\"-1\" >\n\t\t\tLire plus \"\t\t<\/a>\n\n\t\t\t\t<\/div>\n\t\t\t\t<\/article>\n\t\t\t\t<article class=\"elementor-post elementor-grid-item post-7780 post type-post status-publish format-standard has-post-thumbnail hentry category-application\">\n\t\t\t\t<div class=\"elementor-post__text\">\n\t\t\t\t<h4 class=\"elementor-post__title\">\n\t\t\t<a href=\"https:\/\/www.nanofab.com.cn\/fr\/perspicacite-2\/application\/proprietes-et-applications-du-nitrure-de-titane-2\/\" >\n\t\t\t\tNitrure de titane\u4e28TiN Propri\u00e9t\u00e9s et applications\t\t\t<\/a>\n\t\t<\/h4>\n\t\t\t\t<div class=\"elementor-post__excerpt\">\n\t\t\t<p>Propri\u00e9t\u00e9s et applications du nitrure de titane Les couches minces de nitrure de titane (TiN) sont un \u00e9l\u00e9ment important de la technologie de l'information.<\/p>\n\t\t<\/div>\n\t\t\n\t\t<a class=\"elementor-post__read-more\" href=\"https:\/\/www.nanofab.com.cn\/fr\/perspicacite-2\/application\/proprietes-et-applications-du-nitrure-de-titane-2\/\" aria-label=\"Plus d&#039;informations sur Nitrure de titane \u4e28TiN Propri\u00e9t\u00e9s et applications\" tabindex=\"-1\" >\n\t\t\tLire plus \"\t\t<\/a>\n\n\t\t\t\t<\/div>\n\t\t\t\t<\/article>\n\t\t\t\t<\/div>\n\t\t\n\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-ecd583b elementor-widget elementor-widget-heading\" data-id=\"ecd583b\" data-element_type=\"widget\" data-widget_type=\"heading.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t<p class=\"elementor-heading-title elementor-size-default\"><a href=\"https:\/\/www.nanofab.com.cn\/fr\/perspectives-2\/\">Plus d'informations...<\/a><\/p>\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t<\/div>","protected":false},"excerpt":{"rendered":"<p>Quels sont les facteurs qui influencent le processus de rev\u00eatement par pulv\u00e9risation cathodique sur les mat\u00e9riaux en couches minces ? En bombardant une surface solide avec des particules \u00e9nerg\u00e9tiques (g\u00e9n\u00e9ralement des ions positifs acc\u00e9l\u00e9r\u00e9s par un champ \u00e9lectrique), les atomes de la surface solide [...]<\/p>","protected":false},"author":3,"featured_media":7572,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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